0910-60M advanced power technology inc. reserves the right to make changes without fu rther notice. to verify the current version please check our web site at www. advancedpower.com or contact our factory direct. advanced power technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 general description the 0910-60M is an internally matched, common base transistor capable of providing 60 watts of pulsed rf output power at 150 s pulse width, 5% duty factor across the band 890 to 1000 mhz. this hermetically solder-sealed transistor is specifically designed for p-band radar applications. it utilizes gold metallization to provide high reliability. case outline 55aw-1 absolute maximum ratings maximum power dissipation @ 25 o c 180 watts maximum voltage and current bvces collector to emitter voltage 65 volts bvebo emitter to base voltage 3.5 volts ic collector current 8 amps maximum temperatures storage temperature - 65 to + 200 o c operating junction temperature + 200 o c electrical characteristics @ 25 o c symbol characteristics test conditions min typ max units pout pg ? c pd rl vswr 1 vswrs power out power gain collector efficiency pulse droop input return loss load mismatch tolerance load mismatch - stability freq = 890 C 1000 mhz vcc = 40 volts pin = 9.5 watts pulse width = 150 s duty factor = 5% 60 8.0 40 -9 8.5 45 84 0.5 3:1 2:1 watts db % db db note 1: pulse condition of 150 sec, 5%. bvces ices iebo ? jc 1 collector to emitter breakdown collector to emitter leakage emitter to base leakage thermal resistance ic = 40 ma vce = 40 volts vebo = 3.0 volts rated pulse condition 65 10 8 1.0 volts ma ma o c/w issue december 2005 0910 C 60m 60 watts - 40 volts, 150 s, 5% radar 890 - 1000 mhz downloaded from: http:///
0910-60M advanced power technology inc. reserves the right to make changes without fu rther notice. to verify the current version please check our web site at www. advancedpower.com or contact our factory direct. advanced power technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 performance curves C pin vs. pout 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 33 34 35 36 37 38 39 40 41 pin (dbm) pout (w) 890 mhz 936 mhz 1000 mhz pin vs. gain 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 33 34 35 36 37 38 39 40 41 pin (dbm) gain (db) 890 mhz 936 mhz 1000 mhz pin vs. efficency 10 15 20 25 30 35 40 45 50 55 60 65 70 33 34 35 36 37 38 39 40 41 pin (dbm) eff icency (% ) 890 mhz 936 mhz 1000 mhz impedance information output matching circuit input matching circuit 50 ohms 50 ohms z source z load frequencies (mhz) ) ( source z ) ( load z 2 890 4.4-j4.0 2.8-j0.7 937 4.5-j3.3 2.9-j0.0 1000 4.7-j2.5 3.2+j0.95 note 2: load z exclusive of c5, c6 and bead on the test circuit 0910C 60m downloaded from: http:///
0910-60M advanced power technology inc. reserves the right to make changes without fu rther notice. to verify the current version please check our web site at www. advancedpower.com or contact our factory direct. advanced power technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 test circuit 0910C 60m downloaded from: http:///
0910-60M advanced power technology inc. reserves the right to make changes without fu rther notice. to verify the current version please check our web site at www. advancedpower.com or contact our factory direct. advanced power technology inc. 3000 oakmead village drive, santa clara, ca 95051-0808 tel. 408 / 986-8031 fax 408 /869-2324 case outline 0910C 60m downloaded from: http:///
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